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| ON Semiconductort SWITCHMODEt Series NPN Silicon Power Transistors The 2N6547 transistor is designed for high-voltage, high-speed, power switching in inductive circuits where fall time is critical. They are particularly suited for 115 and 220 volt line operated switch-mode applications such as: 2N6547 15 AMPERE NPN SILICON POWER TRANSISTORS 300 and 400 VOLTS 175 WATTS * * * * Switching Regulators PWM Inverters and Motor Controls Solenoid and Relay Drivers Deflection Circuits Specification Features * High Temperature Performance Specified for: Reversed Biased SOA with Inductive Loads Switching Times with Inductive Loads Saturation Voltages Leakage Currents MAXIMUM RATINGS (1) CASE 1-07 TO-204AA (TO-3) II I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I II I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIII IIIIIIIIIIIIIIII I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIII I I I I I I I IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIII I I I I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII III I I I I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I IIII I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII Rating Symbol Value 400 450 850 9.0 15 30 10 20 25 35 Unit Vdc Vdc Vdc Vdc Adc Adc Adc Collector-Emitter Voltage Collector-Emitter Voltage Collector-Emitter Voltage Emitter Base Voltage VCEO(sus) VCEX(sus) VCEV VEB IC ICM IB IBM IE IEM PD Collector Current -- Continuous -- Peak (2) Base Current -- Continuous -- Peak (2) Emitter Current -- Continuous -- Peak (2) Total Power Dissipation @ TC = 25_C @ TC = 100_C Derate above 25_C Watts 175 100 1.0 W/_C _C Operating and Storage Junction Temperature Range TJ, Tstg -65 to +200 THERMAL CHARACTERISTICS Characteristic Symbol RJC TL Max 1.0 Unit Thermal Resistance, Junction to Case _C/W _C Maximum Lead Temperature for Soldering Purposes: 1/8 from Case for 5 Seconds 275 (c) Semiconductor Components Industries, LLC, 2001 1 April, 2001 - Rev. 6 Publication Order Number: 2N6547/D IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I II I I II III I I I I II I I II I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII III I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I II I II I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII III I I I I II I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I II I I II I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I II I II I II IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II II I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I I I I II I I II I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII III I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I II I I II I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I II I III I I I I II I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I II I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I II I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I II I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I II I I II I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I III I I I I II I II IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I II I II I II IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIII I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I II I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII III I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I II I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII *ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted) DYNAMIC CHARACTERISTICS ON CHARACTERISTICS (1) SECOND BREAKDOWN OFF CHARACTERISTICS (1) Output Capacitance (VCB = 10 Vdc, IE = 0, ftest = 1.0 MHz) Current-Gain -- Bandwidth Product (IC = 500 mAdc, VCE = 10 Vdc, ftest = 1.0 MHz) Base-Emitter Saturation Voltage (IC = 10 Adc, IB = 2.0 Adc) (IC = 10 Adc, IB = 2.0 Adc, TC = 100_C Collector-Emitter Saturation Voltage (IC = 10 Adc, IB = 2.0 Adc) (IC = 15 Adc, IB = 3.0 Adc) (IC = 10 Adc, IB = 2.0 Adc, TC = 100_C) DC Current Gain (IC = 5.0 Adc, VCE = 2.0 Vdc) (IC = 10 Adc, VCE = 2.0 Vdc) Second Breakdown Collector Current with base forward biased t = 1.0 s (non-repetitive) (VCE = 100 Vdc) Emitter Cutoff Current (VEB = 9.0 Vdc, IC = 0) Collector Cutoff Current (VCE = Rated VCEV, RBE = 50 , TC = 100_C) Collector Cutoff Current (VCEV = Rated Value, VBE(off) = 1.5 Vdc) (VCEV = Rated Value, VBE(off) = 1.5 Vdc, TC = 100_C) Collector-Emitter Sustaining Voltage (IC = 8.0 A, Vclamp = Rated VCEX, TC = 100_C) Collector-Emitter Sustaining Voltage (IC = 100 mA, IB = 0) (IC = 15 A, Vclamp = Rated VCEO = 100 V, TC = 100_C) Characteristic http://onsemi.com 2N6547 2 2N6546 2N6547 2N6546 2N6547 2N6546 2N6547 VCEO(sus) VCEX(sus) Symbol VCE(sat) VBE(sat) IEBO ICER ICEV Cob hFE IS/b fT Min 125 350 450 200 300 300 400 6.0 12 6.0 0.2 -- -- -- -- -- -- -- -- -- Max 500 1.6 1.6 1.5 5.0 2.5 1.0 5.0 1.0 4.0 28 60 30 -- -- -- -- -- -- -- mAdc mAdc mAdc MHz Unit Vdc Vdc Adc Vdc Vdc -- pF III I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I III I II I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I II I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I II I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I II I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I II I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I II I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I II I III I I I I II I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I II I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I II I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I II I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I II I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I II I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I II I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I II I II I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII *Indicates JEDEC Registered Data. (1) Pulse Test: Pulse Width = 300 s, Duty Cycle = 2%. SWITCHING CHARACTERISTICS Fall Time Storage Time Fall Time Storage Time Inductive Load, Clamped Fall Time Storage Time Rise Time Delay Time Resistive Load (IC = 10 A( k), Vclamp = Rated VCEX, IB1 = 2.0 A, A(pk), clam VBE(off) = 5.0 Vdc, TC = 25_C) (IC = 10 A( k), Vclamp = Rated VCEX, IB1 = 2.0 A, A(pk), clam VBE(off) = 5.0 Vdc, TC = 100_C) (VCC = 250 V, IC = 10 A, IB1 = IB2 = 2.0 A, tp = 100 s, 20A s Duty Cycle v 2.0%) http://onsemi.com 2N6547 3 td ts ts ts tr tf tf tf -- -- -- -- -- -- Typical 0.09 2.0 0.05 1.5 5.0 0.7 4.0 1.0 s s s s s s s s 2N6547 TYPICAL ELECTRICAL CHARACTERISTICS VCE , COLLECTOR-EMITTER VOLTAGE (VOLTS) 100 70 hFE, DC CURRENT GAIN 50 30 20 -55C 10 7.0 5.0 0.2 0.3 VCE = 2.0 V VCE = 10 V 0.5 1.0 2.0 3.0 5.0 7.0 IC, COLLECTOR CURRENT (AMP) 10 20 25C TJ = 150C 2.0 1.6 1.2 0.8 0.4 0 0.07 0.1 IC = 2.0 A 5.0 A 10 A 15 A TJ = 25C 2.0 3.0 0.2 0.3 0.5 0.7 1.0 IB, COLLECTOR CURRENT (AMP) 5.0 7.0 Figure 1. DC Current Gain Figure 2. Collector Saturation Region 1.2 V, VOLTAGE (VOLTS) 1.0 0.8 0.6 0.4 0.2 TJ = 25C V, TEMPERATURE COEFFICIENTS (mV/C) 1.4 2.5 2.0 1.5 1.0 0.5 0 -0.5 -1.0 -1.5 -2.0 -2.5 0.2 0.3 0.5 0.7 1.0 VB for VBE *VC for VCE(sat) *APPLIES FOR IC/IB v hFE @ VCE + 2.0 V 3 25C to 150C -55C to 25C 25C to 150C -55C to 25C 2.0 3.0 5.0 7.0 10 20 VBE(sat) @ IC/IB = 5.0 VBE(on) @ VCE = 2.0 V VCE(sat) @ IC/IB = 5 0.5 1.0 2.0 3.0 5.0 7.0 10 20 0 0.2 0.3 IC, COLLECTOR CURRENT (AMP) IC, COLLECTOR CURRENT (AMP) Figure 3. "On" Voltages Figure 4. Temperature Coefficients 3.0 k 2.0 k 1.0 k 700 500 300 200 100 70 50 30 0.02 tr VCC = 250 V IC/IB = 5.0 TJ = 25C t, TIME (ns) 10 k 7.0 k 5.0 k 3.0 k 2.0 k 1.0 k 700 500 300 200 ts t, TIME (ns) td @ VBE(off) = 5.0 V tf VCC = 250 V IC/IB = 5.0 IB1 = IB2 TJ = 25C 0.05 5.0 0.1 0.2 1.0 2.0 0.5 IC, COLLECTOR CURRENT (AMP) 10 20 100 0.02 0.05 0.1 0.2 0.5 1.0 2.0 5.0 IC, COLLECTOR CURRENT (AMP) 10 20 Figure 5. Turn-On Time Figure 6. Turn-Off Time http://onsemi.com 4 2N6547 MAXIMUM RATED SAFE OPERATING AREAS 50 IC, COLLECTOR CURRENT (AMP) 20 10 dc 5.0 ms 1.0 ms 100 s 10 ms IC, COLLECTOR CURRENT (AMP) 20 16 12 VCEX(sus) 8.0 4.0 0 VBE(off) v 5 V TC v 100C 0 8.0 V VCEO(sus) VCEX(sus) 500 TURN OFF LOAD LINE BOUNDARY FOR 2N6547. FOR 2N6546, VCEO AND VCEX ARE 100 VOLTS LESS. 5.0 2.0 1.0 0.5 0.2 0.1 0.05 TC = 25C BONDING WIRE LIMITED THERMAL LIMIT (SINGLE PULSE) SECOND BREAKDOWN LIMIT 0.02 2N6546 2N6547 0.01 CURVES APPLY BELOW RATED VCEO 0.005 50 70 100 200 300 400 5.0 7.0 10 20 30 VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS) 100 400 200 300 VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS) Figure 7. Forward Bias Safe Operating Area Figure 8. Reverse Bias Safe Operating Area 100 POWER DERATING FACTOR (%) 80 60 THERMAL DERATING 40 20 0 SECOND BREAKDOWN DERATING 0 40 80 120 160 TC, CASE TEMPERATURE (C) 200 Figure 9. Power Derating There are two limitations on the power handling ability of a transistor: average junction temperature and second breakdown. Safe operating area curves indicate IC - VCE limits of the transistor that must be observed for reliable operation; i.e., the transistor must not be subjected to greater dissipation than the curves indicate. The data of Figure 7 is based on TC = 25_C; TJ(pk) is variable depending on power level. Second breakdown pulse limits are valid for duty cycles to 10% but must be derated when TC 25_C. Second breakdown limitations do not derate the same as thermal limitations. Allowable current at the voltages shown on Figure 7 may be found at any case temperature by using the appropriate curve on Figure 9. TJ(pk) may be calculated from the data in Figure 10. At high case temperatures, thermal limitations will reduce the power that can be handled to values less than the limitations imposed by second breakdown. r(t), TRANSIENT THERMAL RESISTANCE (NORMALIZED) 1.0 0.7 0.5 0.3 0.2 0.1 0.07 0.05 0.03 0.02 0.01 0.01 D = 0.5 0.2 0.1 0.05 0.02 0.01 0.02 SINGLE PULSE 0.05 0.1 0.2 0.5 1.0 P(pk) ZJC (t) = r(t) RJC RJC = 1.0C/W MAX D CURVES APPLY FOR POWER PULSE TRAIN SHOWN READ TIME AT t1 TJ(pk) - TC = P(pk) ZJC(t) 2.0 5.0 t, TIME (ms) 10 20 50 t2 DUTY CYCLE, D = t1/t2 100 200 500 1.0 k t1 Figure 10. Thermal Response http://onsemi.com 5 2N6547 PACKAGE DIMENSIONS CASE 1-07 TO-204AA (TO-3) ISSUE Z A N C -T- E D U V 2 2 PL SEATING PLANE K M NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. ALL RULES AND NOTES ASSOCIATED WITH REFERENCED TO-204AA OUTLINE SHALL APPLY. 0.13 (0.005) L G 1 TQ M Y M -Y- H B -Q- 0.13 (0.005) M TY M DIM A B C D E G H K L N Q U V INCHES MIN MAX 1.550 REF --1.050 0.250 0.335 0.038 0.043 0.055 0.070 0.430 BSC 0.215 BSC 0.440 0.480 0.665 BSC --0.830 0.151 0.165 1.187 BSC 0.131 0.188 MILLIMETERS MIN MAX 39.37 REF --26.67 6.35 8.51 0.97 1.09 1.40 1.77 10.92 BSC 5.46 BSC 11.18 12.19 16.89 BSC --21.08 3.84 4.19 30.15 BSC 3.33 4.77 STYLE 1: PIN 1. BASE 2. EMITTER CASE: COLLECTOR http://onsemi.com 6 2N6547 Notes http://onsemi.com 7 2N6547 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. "Typical" parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including "Typicals" must be validated for each customer application by customer's technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. 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